Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

8-SOIC (0.154, 3.90mm Width)

Number of Pins  

8

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

10A 12A

Number of Elements  

2

Turn Off Delay Time  

15 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2004

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

8

ECCN Code  

EAR99

Voltage - Rated DC  

20V

Max Power Dissipation  

2W

Terminal Form  

GULL WING

Current Rating  

10A

Base Part Number  

IRF9910PBF

Element Configuration  

Dual

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2W

FET Type  

2 N-Channel (Dual)

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

13.4m Ω @ 10A, 10V

Vgs(th) (Max) @ Id  

2.55V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

900pF @ 10V

Gate Charge (Qg) (Max) @ Vgs  

11nC @ 4.5V

Rise Time  

14ns

Fall Time (Typ)  

7.5 ns

Continuous Drain Current (ID)  

12A

Threshold Voltage  

2.55V

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0093Ohm

Drain to Source Breakdown Voltage  

20V

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

Logic Level Gate

Nominal Vgs  

2.55 V

Height  

1.5mm

Length  

5mm

Width  

4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free